Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals
Identifieur interne : 000374 ( Main/Repository ); précédent : 000373; suivant : 000375Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga0.75In0.25Se single crystals
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Abstract
Dark electrical resistivity, space-charge-limited (SCL) current and photoconductivity measurements were carried out on Ga0.75In0.25Se single crystals. Analysis of the dark resistivity measurements revealed the presence of one level with activation energy of 0.10 eV. Current-voltage characteristics showed that both ohmic and SCL characters exhibit in 180-300 K range. Analysis of the experimental data in the SCL region resulted with a trap level at 0.11 eV above the valence band. Photoconductivity measurements were performed at different light intensities in the temperature range of 150-300 K. Behavior of the recombination mechanism in the crystal was brought out as sublinear recombination from the dependence of photocurrent on illumination intensity. Moreover, obtained activation energies were compared with the results of other experimental techniques applied to Ga0.75In0.25Se crystals in literature. .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga<sub>0.75</sub>In<sub>0.25</sub>Se single crystals</title><author><name sortKey="Isik, M" uniqKey="Isik M">M. Isik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronics Engineering, Atilim University</s1><s2>06836 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06836 Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Gasanly, N M" uniqKey="Gasanly N">N. M. Gasanly</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Middle East Technical University</s1><s2>, 06800 Ankara</s2><s3>TUR</s3><sZ>2 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>, 06800 Ankara</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0211495</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0211495 INIST</idno><idno type="RBID">Pascal:13-0211495</idno><idno type="wicri:Area/Main/Corpus">000C01</idno><idno type="wicri:Area/Main/Repository">000374</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Charge carrier trapping</term><term>Dark conductivity</term><term>Defect states</term><term>Electrical conductivity</term><term>Gallium Indium Selenides Mixed</term><term>IV characteristic</term><term>Monocrystals</term><term>Photoconductivity</term><term>Semiconductor materials</term><term>Space-charge-limited conduction</term><term>Temperature effects</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term><term>Conductivité électrique</term><term>Conduction limitée charge espace</term><term>Photoconductivité</term><term>Conductivité obscurité</term><term>Piégeage porteur charge</term><term>Energie activation</term><term>Caractéristique courant tension</term><term>Etat défaut</term><term>Gallium Indium Séléniure Mixte</term><term>Monocristal</term><term>Semiconducteur</term><term>Ga0.75In0.25Se</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Dark electrical resistivity, space-charge-limited (SCL) current and photoconductivity measurements were carried out on Ga<sub>0.75</sub>In<sub>0.25</sub>Se single crystals. Analysis of the dark resistivity measurements revealed the presence of one level with activation energy of 0.10 eV. Current-voltage characteristics showed that both ohmic and SCL characters exhibit in 180-300 K range. Analysis of the experimental data in the SCL region resulted with a trap level at 0.11 eV above the valence band. Photoconductivity measurements were performed at different light intensities in the temperature range of 150-300 K. Behavior of the recombination mechanism in the crystal was brought out as sublinear recombination from the dependence of photocurrent on illumination intensity. Moreover, obtained activation energies were compared with the results of other experimental techniques applied to Ga<sub>0.75</sub>In<sub>0.25</sub>Se crystals in literature. .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>421</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Temperature-dependent electrical resistivity, space-charge-limited current and photoconductivity of Ga<sub>0.75</sub>In<sub>0.25</sub>Se single crystals</s1></fA08><fA11 i1="01" i2="1"><s1>ISIK (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>GASANLY (N. M.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Electronics Engineering, Atilim University</s1><s2>06836 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Middle East Technical University</s1><s2>, 06800 Ankara</s2><s3>TUR</s3><sZ>2 aut.</sZ></fA14><fA20><s1>53-56</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000509067840110</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0211495</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Dark electrical resistivity, space-charge-limited (SCL) current and photoconductivity measurements were carried out on Ga<sub>0.75</sub>In<sub>0.25</sub>Se single crystals. Analysis of the dark resistivity measurements revealed the presence of one level with activation energy of 0.10 eV. Current-voltage characteristics showed that both ohmic and SCL characters exhibit in 180-300 K range. Analysis of the experimental data in the SCL region resulted with a trap level at 0.11 eV above the valence band. Photoconductivity measurements were performed at different light intensities in the temperature range of 150-300 K. Behavior of the recombination mechanism in the crystal was brought out as sublinear recombination from the dependence of photocurrent on illumination intensity. Moreover, obtained activation energies were compared with the results of other experimental techniques applied to Ga<sub>0.75</sub>In<sub>0.25</sub>Se crystals in literature. .</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B40</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet température</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Temperature effects</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Conduction limitée charge espace</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Space-charge-limited conduction</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photoconductivité</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoconductivity</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Conductivité obscurité</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Dark conductivity</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Piégeage porteur charge</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Charge carrier trapping</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Captura portador carga</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Energie activation</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Activation energy</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>IV characteristic</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Etat défaut</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Defect states</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Monocristal</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Monocrystals</s0><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Ga0.75In0.25Se</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>196</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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